SIGC84T120R3 edited by infineon technologies ai ps dd hv3, l7671a , edition 2 , 04.09.2003 igbt 3 chip this chip is used for: power module features: 1200v trench + field stop technology low turn - off losses short tail current positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die size package ord ering code SIGC84T120R3 1200v 75a 9.13 x 9.15 mm 2 sawn on foil q67050 - a4107 - a001 mechanical parameter: raster size 9.13 x 9.15 emitter pad size 8x(1.864 x 3.7 36 ) gate pad size 1.139 x 1.139 mm area total / active 83.5 / 63.6 mm 2 thickness 140 m wafer size 150 mm flat position 90 grd max.possible chips per wafer 164 pcs passivation frontside photoimide emitter metallization 3200 nm alsicu collector metallization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die b ond electrically conductive glue or solder wire bond al, <500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC84T120R3 edited by infineon technologies ai ps dd hv3, l7671a , edition 2 , 04.09.2003 maximum ratings : param eter symbol value unit collector - emitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 225 a gate emitter voltage v ge 20 v operating junction a nd storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip) , t j =25 c, unless otherwise specified: value parameter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c = 3 ma 1200 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =75a 1.4 1.7 2.1 gate - emitter threshold voltage v ge(th) i c =3ma , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector curren t i ces v ce =1200v , v ge =0v 10.1 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 600 na integrated gate resistor r gint 10 w electrical characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input ca pacitance c iss 5345 output capacitance c oss 280 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz 242 pf switching characteristics (tested at component), inductive load value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) 285 rise time t r 45 turn - off delay time t d(off) 520 fall time t f t j =125 c v cc =600v, i c =75a, v ge = - 15/15v, r g = 4.7 w 90 ns 1) values also influenced by parasitic l - and c - in measurement and package.
SIGC84T120R3 edited by infineon technologies ai ps dd hv3, l7671a , edition 2 , 04.09.2003 chip drawing:
SIGC84T120R3 edited by infineon technologies ai ps dd hv3, l7671a , edition 2 , 04.09.2003 further electrical characteristics: this chip data sheet refers to the device data sheet tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - no rmen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain comp onents and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descript ions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our i nfineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infin eon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or syste m, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonabl e to assume that the health of the user or other persons may be endangered.
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